Comparison ledger
Applied Materials Centura 5200 DPS, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura 5200 DPSApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 1995– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura 5200 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | 4 Chamber[1] | — |
| Phase | 3 Delta[1] | — |
| Wafer Size | 8 inch[1] | — |
| Number of Chambers | 4[1] | — |
| Frequency | 50/60 Hz[1] | — |
| Vintage Year | 1995[1] | — |
| Year | 1995[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] |
| Cryo DRIE etch rate | — | up to 5 µm/min[2] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[2] |
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