Waferpedia

Comparison ledger

8100 Xversus100 ICP Fluorine

Applied Materials 8100 X, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
8100 XApplied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 8100 XOxford Instruments 100 ICP Fluorine
Specifications
CategoryEtch[1]—
Wafer size4 inch[2]4 inch, 6 inch, 8 inch (with clamp change)[3]
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[3]
Cryo DRIE etch rate—up to 5 µm/min[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]Equipment inventory listing
  3. [3]nanofab.utah.edunanofab.utah.edu