Comparison ledger
Applied Materials 0041-39086 ESC Part, Thermo Fisher Scientific FEI OptiFIB Taipan G 2 FIB, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0041-39086 ESC PartApplied Materials | Scientific FEI OptiFIB Taipan G 2 FIBThermo Fisher |
|---|---|---|
| OEM | Applied Materials | Thermo Fisher |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | 7 nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | — | Thermo Fisher Scientific FEI OptiFIB Taipan G 2 FIB |
| Cited variants | — | |
| Specifications | ||
| Configuration | — | 7 nm[1] |
| Full Load Amps | — | 24 A[1] |
| Full Load | — | 24 A[3] |
| Largest Load | — | 13 A[3] |
| Acceleration Voltage | — | 0.5-30 kV[5] |
| Beam Current Range | — | 250 fA up to 20 nA[5] |
| Stage Travel (X,Y,Z) | — | 75 x 75 x 20 mm[5] |
| Beam Drift Stability | — | ~4 nm/min (drift)[5] |
| Conductor Resistivity (for deposit) | — | ≤ 200 µΩ·cm[5] |
| Insulator Resistivity | — | ≥ 1e15 µΩ·cm[5] |
| FIB Column / Type | — | Ion-photon Coaxial Taipan Column[5] |
| Image Resolution | — | ~ 2.7 nm at 250 fA, 30 kV (graphite sample)[5] |
| Type | — | Focused Ion Beam (FIB)[1] |
| Node capability | — | 7 nm[3] |
| Electrical requirements | — | 200-240 VAC, Single Phase, 50/60 Hz[1] |
| Full load current | — | 24 A[1] |
| Largest load current | — | 13 A[3] |
| Vintage year | — | 2015[1] |
| Tool type | — | Focused Ion Beam (FIB)[1] |
| Node | — | 7 nm[1] |
| Power | — | 200-240 VAC[1] |
| Phase | — | Single Phase[1] |
| Frequency | — | 50/60 Hz[1] |
| Upgrade | — | CE Upgrade[3] |
| Upgrade note | — | Upgrade from 10 nm G1 to 7 nm G2[2] |
| Condition note | — | Without HDD / SSD[1] |
| Electrical rack note | — | Tapian Electrical Rack[4] |
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