Comparison ledger
Applied Materials 0020 18455 Part, MKS 660, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0020 18455 PartApplied Materials | 660MKS |
|---|---|---|
| OEM | Applied Materials | MKS |
| Category | Deposition | Deposition |
| Wafer size | — | 6-inch diameter stage |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0020 18455 Part | MKS 660 |
| Specifications | ||
| Configuration | Shaft,Rf In Local Match, Hdpcvd,Rev3[1] | — |
| process | — | sputter deposition of metals, alloys, and insulating thin films[2] |
| film thickness range | — | from a few nm to hundreds of nm[2] |
| cathodes | — | three 3-inch diameter confocal cathodes[2] |
| power supplies | — | 2 RF power supplies[2] |
| DC power supply | — | switchable DC power supply[2] |
| co-sputter capability | — | yes[2] |
| reactive sputtering | — | available (Nitrogen or Oxygen)[2] |
| stage | — | 6-inch diameter stage[2] |
| substrate rotation | — | +/- 10% uniformity[2] |
| vacuum system | — | cryo and turbo pumped to 1 x 10^7 Torr[2] |
| substrate heating | — | up to 200 C[2] |
| liftoff deposition | — | with sputter power[2] |
| argon pressure range | — | 3-15 mT controllable with 200 sccm MFC controller[2] |
| Wafer size | — | 6-inch diameter stage[2] |
| Power | — | 2 RF power supplies[3] |
| Vacuum | — | Cryo and turbo pumped to 1 x 10^7 Torr[2] |
| Film thickness | — | From a few nm to hundreds of nm[2] |
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