Comparison ledger
Applied Materials 0020 17485 Part, STS Multiplex, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0020 17485 PartApplied Materials | MultiplexSTS |
|---|---|---|
| OEM | Applied Materials | STS |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0020 17485 Part | STS Multiplex |
| Specifications | ||
| Configuration | Strap, RF Out 2 Balanced Coil Match, Hdp[1] | Decomposition Capability:[2] |
| Category | — | Deposition[2] |
| Wafer size | — | 6 inch[2] |
| Film deposited | — | Silicon Nitride (Si3N4)[2] |
| Processing gases | — | Oxygen, Carbon Tetrafluoride (CF4), Silane, Nitrous Oxide, Ammonia[2] |
| Tool type | — | PE CVD[3] |
| Deposition type | — | Plasma-enhanced chemical vapor deposition (PECVD)[2] |
| Deposited films | — | Thin films such as oxide, nitride, and silicon[3] |
| Process gases | — | Oxygen, carbon tetrafluoride (CF4), silane, nitrous oxide, ammonia[2] |
| Batch mode | — | Single or dual-wafer batch mode, no cassette operation[3] |
| Decomposition capability | — | Silicon dioxide (SiO2); silicon nitride (Si3N4)[2] |
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