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Comparison ledger

0010-22161 High EFF RF Matchversus320

Applied Materials 0010-22161 High EFF RF Match, STS 320, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
320STS
OEMApplied MaterialsSTS
Category——
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
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Generation——
FamilyApplied Materials 0010-22161 High EFF RF MatchSTS 320
Specifications
MakeApplied Materials[1]—
Model0010-22161[1]—
DescriptionHTESC PH 1 REV A[2]—
ConditionUsed[2]—
Stock NumberBM6628[2]—
Reactive Ion Etch Type—Parallel-plate RIE[3]
RF Frequency—13.56 MHz[3]
Driven Electrode Area—900 cm²[3]
Process Gases—SF6, SF6+O2, CF4, CF4+O2[3]
Pressure (typical)—55 mtorr[3]
Sources (3)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]tarasemi.comtarasemi.com
  3. [3]nanocenter.umd.edunanocenter.umd.edu