Comparison ledger
Applied Materials 0010-22161 High EFF RF Match, Canon MPA 600 FA, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-22161 High EFF RF MatchApplied Materials | MPA 600 FACanon |
|---|---|---|
| OEM | Applied Materials | Canon |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-22161 High EFF RF Match | Canon MPA 600 |
| Specifications | ||
| Make | Applied Materials[1] | — |
| Model | 0010-22161[1] | — |
| Description | HTESC PH 1 REV A[2] | — |
| Condition | Used[2] | — |
| Stock Number | BM6628[2] | — |
| Configuration | — | Upgraded to 150 mm compatibility[3] |
| Type | — | 1X mirror projection auto feeder / mask aligner[4] |
| Auto feeder | — | Single or double, cassette to cassette, backside wafer handling[4] |
| Wafer sizes | — | 4 inch, 5 inch, 6 inch[4] |
| Mask sizes | — | 5 inch, 6 inch, 7 inch[4] |
| Resolution | — | 1.5 um (using positive resist)[4] |
| Illumination | — | 2 kW high pressure mercury lamp[4] |
| Wavelengths used | — | 365 nm (i-line), 405 nm (h-line), 436 nm (g-line)[4] |
| Intensity | — | At 1800 watts power output: 4 inch wafer more than 700 mW, 5 inch wafer more than 650 mW, 6 inch wafer more than 600 mW[4] |
| Intensity / exposure uniformity | — | Within plus/minus 3%[4] |
| Constant temperature control | — | Monitors and controls system temperature within plus/minus 0.3 degrees C[4] |
| Distortion control | — | PDC matic distortion control[4] |
| Automatic alignment | — | HeNe 633 nm laser beam scanning alignment[4] |
| Alignment modes | — | Spot beam / sheet beam[4] |
| Alignment accuracy | — | 3sigma <= 0.54 um[4] |
| Required facilities | — | 200 VAC, 3Phase, 6 kVA, 50/60Hz; Air Supply(CTC): 200 VAC, 3Phase, 8 kVA, 50/60Hz; CDA pressure minimum 6.5 kg/cm2, flow rate 130 lit/min; Vacuum 50 cmHg or more; Exhaust flow for illuminator 6.5 m/sec to 9.5 m/sec[4] |
| Compatibility upgrade | — | Upgraded to 150 mm compatibility[5] |
| Monitor | — | Monitor not included[5] |
| Vintage | — | 1991 vintage[5] |
| Wafer handling | — | Single or double, cassette to cassette, backside wafer handling[5] |
| Tool type | — | 1X mirror projection mask aligner[5] |
| Temperature control | — | Monitors and controls system temperature within plus/minus 0.3 degrees C[5] |
| Power / electrical | — | 200 VAC, 3Phase, 6 kVA, 50/60Hz[5] |
| Air supply (CTC) | — | 200 VAC, 3Phase, 8 kVA, 50/60Hz[5] |
| CDA pressure | — | Minimum 6.5 kg/cm2, flow rate 130 lit/min[5] |
| Vacuum | — | 50 cmHg or more[5] |
| Exhaust flow for illuminator | — | 6.5 m/sec to 9.5 m/sec[5] |