Comparison ledger
Applied Materials 0010-16392 ESC Assembly, Plasma-Therm Versaline ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | Versaline ICPPlasma-Therm |
|---|---|---|
| OEM | Applied Materials | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | Plasma-Therm Versaline ICP |
| Cited variants | — | |
| Specifications | ||
| OEM | Applied Materials[2] | — |
| Model | 0010-16392[2] | — |
| Type | ESC Assembly[2] | — |
| Wafer Size | 300 mm[3] | 4" wafers or smaller samples mounted to 4" carrier wafers[5] |
| Electrode Configuration | Dual[3] | — |
| Configuration | — | 4 Process Modules[4] |
| RF Power Supply | — | 500 W[5] |
| Gases Available | — | Cl2, BCl3, Ar, O2[5] |
| ICP Source Frequency | — | 2MHz[1] |
| Substrate Bias Frequency | — | 13.56MHz (optional 40MHz)[1] |
| Substrate Temperature Control | — | Backside helium cooling with mechanical or electrostatic clamping[1] |
| Control System | — | Cortex control system with EndpointWorks[1] |
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