Comparison ledger
Applied Materials 0010-16392 ESC Assembly, Oxford Instruments Plasmalab80, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | Plasmalab80Oxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | up to 8-inch diameter wafers |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | Oxford Instruments Plasmalab80 |
| Specifications | ||
| OEM | Applied Materials[1] | — |
| Model | 0010-16392[1] | — |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | — |
| Electrode Configuration | Dual[2] | — |
| Etch and deposition capabilities | — | Combined etch and deposition tool[3] |
| Etch processes | — | Bosch (gas chopping) or cryo processes[3] |
| Deposition materials | — | Silicon dioxide, silicon nitride, or mixed oxynitrides[3] |
| Wafer diameter | — | Up to 8-inch wafers[3] |
| Active etch/deposition region | — | Center 4 inches of the chamber[3] |
| Available gases | — | N2, N2O, O2, SF6, Ar (max flow 100 sccm); C4F8, SiH4, CH4 (max flow 20 sccm)[3] |
| Power | — | 300 W RF and 300 W ICP[3] |
| Process pressure | — | 4 to 100 mTorr[3] |
| Substrate temperature | — | -150 to 200 C[3] |
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