Comparison ledger
Applied Materials 0010-16392 ESC Assembly, Lam Research 4520 Oxide, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | 4520 OxideLam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | Lam Research Rainbow 4520 |
| Specifications | ||
| OEM | Applied Materials[1] | — |
| Model | 0010-16392[1] | — |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | 200 mm (8 inch) standard, optional 150 mm (6 inch) and 125 mm (5 inch)[3] |
| Electrode Configuration | Dual[2] | — |
| Configuration | — | Refurbished[3] |
| Mounting | — | Bulkhead[3] |
| Software | — | Envision 1.52[3] |
| Indexers | — | HINE[3] |
| AC Box | — | -002[3] |
| Gas Box | — | Orbital Welded[3] |
| Clamping | — | ESC[3] |
| Backside Helium | — | Closed Loop[3] |
| Generator | — | PDW 2200[3] |
| Endpoint | — | Monochrometer[3] |
| MFCs | — | Unit 1660[3] |
| Gas 1 | — | Ar 1000[3] |
| Gas 2 | — | N2 200[3] |
| Gas 3 | — | O2 200[3] |
| Gas 4 | — | CH4 200[3] |
| Gas 5 | — | CHF3 50[3] |
| Gas 6 | — | SF6 50[3] |
| RF Match | — | LOFAT[3] |
| Gas Configuration (example) | — | Gas 1: Ar 1000 sccm, Gas 2: N2 200 sccm, Gas 3: O2 200 sccm, Gas 4: CH4 200 sccm, Gas 5: CHF3 50 sccm, Gas 6: SF6 50 sccm, Gas 7: O2 1000 sccm[3] |
| Power Requirements | — | 208 V, 50 A, 50/60 Hz[4] |
| Dimensions (Width x Depth x Height) | — | 47.244 in x 98.425 in x 66.929 in (120.0 cm x 250.0 cm x 170.0 cm)[4] |
| Weight | — | 1,764 lb (800 kg)[4] |
| Uptime | — | ≥ 85%[5] |
| MTTC (Mean Time to Clean) | — | < 6 hours[5] |
| MTBF (Mean Time Between Failures) | — | ≥ 125 hours[5] |
| MTTR (Mean Time to Repair) | — | ≤ 4 hours[5] |
| Thermal Oxide Etch Rate | — | ≥ 4500 A/min[5] |
| BPSG Etch Rate | — | > 7500 A/min[5] |
| TEOS Etch Rate | — | > 5000 A/min[5] |
| Uniformity | — | +/- 10% 3σ[5] |
| Selectivity (BPSG/TEOS to poly) | — | > 15:1[5] |
| Particles | — | < 0.08/cm2 at >0.3μm[5] |
| Year of Manufacture (example) | — | 1996[4] |
| Gas 7 | — | O2 1000[3] |
| Software Revision | — | Envision 1.52[3] |
| Backside Helium Cooling | — | Closed loop[3] |
| RF Generator | — | PDW 2200 (2200 watt)[3] |
| Endpoint Detection | — | Monochrometer (enhanced Monochromator for automatic endpoint on exposed oxide)[3] |
| Process Gas Types (available) | — | Ar, CF4, CHF3, O2, CO, SF6, N2, Cl2, HBr, CH3F, He, CH2F2[4] |
| Exterior Dimensions (W x D x H) | — | 120.0 cm x 250.0 cm x 170.0 cm[4] |
| Uniformity (3σ) | — | ± 10%[5] |
| Uptime (typical) | — | ≥ 85%[5] |
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