Comparison ledger
Agilent 4155B, Filmetrics R50-4PP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 4155BAgilent | R50-4PPFilmetrics |
|---|---|---|
| OEM | Agilent | Filmetrics |
| Category | Electrical measurement | Electrical measurement |
| Wafer size | — | 525 um +/- 25 um sample thickness default configuration |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Agilent 4155B | Filmetrics R50-4PP |
| Cited variants |
| — |
| Specifications | ||
| Instrument role | DC instrument (SPA)[2] | — |
| Associated system | MPI TS150 probe station[2] | — |
| Measurement type | DC impedance measurements[2] | — |
| Current measurement resolution | 10 fA[1] | — |
| Offset current | 3 pA[1] | — |
| Voltage measurement resolution (differential mode) | 1 µV[1] | — |
| Maximum output voltage (with HPSMU) | 200 V[1] | — |
| Maximum output current (with HPSMU) | 1 A[1] | — |
| Minimum sampling interval | 60 µs[1] | — |
| Maximum number of data points | 10001[1] | — |
| Number of SMUs | 4[3] | — |
| Range change mode | Auto / Fixed / Limited Auto[1] | — |
| Compatible layers | — | Metal, Conductive Oxide, Silicon and Polysilicon[4] |
| Default configuration | — | Configured by default for metallic layers and sample thickness of 525 um +/- 25 um[4] |
| Measurement range | — | 5 mOhm/sq to 5MOhm/sq[4] |
| Measurement area | — | 10x 10 to 200 x 200 mm[4] |
| Accuracy | — | +/- 1%[4] |
| Repeatability | — | < 0.5 %[4] |
| Temperature compensation | — | Yes[4] |
| Mapping | — | 2D and 3D mapping[4] |
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