Comparison ledger
ABM -407B-2-S-CE-S293 Robot, JEOL JBX-8100FS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | JBX-8100FSJEOL | |
|---|---|---|
| OEM | ABM | JEOL |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ABM -407B-2-S-CE-S293 Robot | JEOL JBX-8100FS |
| Cited variants | — | |
| Specifications | ||
| Model | ABM-407B-2-S-CE-S293[2] | — |
| Description | ROBOT[2] | — |
| Refurbished RTP RTA | AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[2] | — |
| KLA-Tencor Spare Parts and Service | RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[2] | — |
| Refurbished Isotropic Plasma Etcher | Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[2] | — |
| Refurbished PECVD, ALD Equipment | Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[2] | — |
| Refurbished Mask Aligner | Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[2] | — |
| Refurbished Bonding | SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[2] | — |
| Refurbished Wafer Prober | Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[2] | — |
| machine type | — | maskless lithograph ML2 type[3] |
| emitter | — | patented ZrO/W (Schottky) emitter[3] |
| Emitter type | — | ZrO/W (Schottky) emitter[3] |
| Writing method | — | Spot beam, vector scan, step and repeat[1] |
| Accelerating voltage | — | 100 kV (G1); 100/50 kV (G2); 200/130/100/50 kV (G3)[1] |
| Beam current range | — | 5 × 10⁻¹² to 2 × 10⁻⁷ A[1] |
| Maximum scanning speed | — | 125 MHz[1] |
| Field size (high resolution mode) | — | 100 μm × 100 μm[4] |
| Field size (high throughput mode) | — | 1,000 μm × 1,000 μm (G1/G2); 2,000 μm × 2,000 μm (G3)[1] |
| Stage movable area | — | 190 mm × 170 mm[1] |
| Stage positioning resolution | — | 0.6 nm (standard); 0.15 nm (optional)[1] |
| Overlay accuracy (high resolution mode) | — | ≤±9 nm (G1/G2); ≤±8 nm (G3)[1] |
| Overlay accuracy (high throughput mode) | — | ≤±20 nm[4] |
| Field stitching accuracy (high resolution mode) | — | ≤±9 nm (G1/G2); ≤±8 nm (G3)[1] |
| Field stitching accuracy (high throughput mode) | — | ≤±20 nm[4] |
| Minimum line width | — | 8 nm[5] |
| Minimum step size | — | 0.5 nm[5] |
| Substrate size | — | Maximum 200 mm φ wafer, 6 inch mask blanks, and micro sample pieces of any size[1] |
| Power consumption (normal operation) | — | Approximately 3 kVA[1] |
| Footprint (W × D × H) | — | 4.9 m × 3.7 m × 2.6 m[1] |
| Electron source | — | ZrO/W (Schottky) thermal field emitter[3] |