Comparison ledger
ABM -407B-1-S-CES293 Robot, KLA F 40 Thin Film Thickness Measurement, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ||
|---|---|---|
| OEM | ABM | KLA |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ABM -407B-1-S-CES293 Robot | KLA F 40 Thin Film Thickness Measurement |
| Cited variants | — | |
| Specifications | ||
| Model | ABM-407B-1-S-CES293[2] | — |
| Description | ROBOT[2] | — |
| Refurbished RTP RTA | AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[2] | — |
| KLA-Tencor Spare Parts and Service | RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[2] | — |
| Refurbished Isotropic Plasma Etcher | Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[2] | — |
| Refurbished PECVD, ALD Equipment | Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[2] | — |
| Refurbished Mask Aligner | Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[2] | — |
| Refurbished Bonding | SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[2] | — |
| Refurbished Wafer Prober | Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[2] | — |
| Spectrometer Wavelength Range (F40) | — | 400 – 850 nm[1] |
| Spectrometer Wavelength Range (F40-UV) | — | 190 – 1100 nm[1] |
| Spectrometer Wavelength Range (F40-EXR) | — | 400 – 1700 nm[1] |
| Spectrometer Wavelength Range (F40-NIR) | — | 950 – 1700 nm[1] |
| Spectrometer Wavelength Range (F40-UVX) | — | 190 – 1700 nm[1] |
| Spectrometer Wavelength Range (F40-XT) | — | 1440 – 1690 nm[1] |
| Thickness Range (F40, 10X Objective) | — | 20 nm – 45 µm[1] |
| Thickness Range (F40-UV, 10X Objective) | — | 4 nm – 35 µm[1] |
| Thickness Range (F40-EXR, 10X Objective) | — | 20 nm – 115 µm[1] |
| Thickness Range (F40-XT, 10X Objective) | — | 0.2 µm – 140 µm[1] |
| Spot Size (50X Objective with 50µm Aperture) | — | 1 µm[1] |
| Accuracy (F40, F40-EXR) | — | 2 nm or 0.2%[1] |
| Accuracy (F40-UV, F40-UVX) | — | 1 nm or 0.2%[1] |
| Precision (F40, F40-UV, F40-EXR, F40-UVX) | — | 0.02 nm[1] |
| Power | — | 100-240 VAC, 50-60 Hz, 20 W[1] |
| Measurement principle | — | Spectral reflectance[3] |
| Spot size (minimum) | — | 1 µm[3] |
| Light source | — | Supplied by microscope[1] |
| Power requirements | — | 100-240VAC, 50-60Hz, 20W[1] |
| Accuracy | — | The greater of 1nm or 0.2% (for F40-UV/-UVX); 2nm or 0.2% (for F40/-EXR); 3nm or 0.4% (for F40-NIR); 5nm or 0.4% (for F40-XT)[1] |
| Precision (1σ, 100 measurements of 1µm SiO2-on-Si) | — | 0.02nm (F40-UV/-UVX/F40/-EXR); 0.1nm (F40-NIR); 1nm (F40-XT)[1] |
| Stability (2σ of daily average over 20 days) | — | 0.05nm (F40-UV/-UVX/F40/-EXR); 0.12nm (F40-NIR); 1nm (F40-XT)[1] |
| Computer interface | — | USB 2.0[1] |
| Operating system (PC) | — | Windows 10 (64-bit) or later; macOS Catalina or later with Parallels[1] |
| Processor minimum | — | 1.4 GHz[1] |
| Thickness range (F40 with 10X objective) | — | 20nm – 45µm[1] |
| Wavelength range (F40) | — | 400 – 850nm[3] |